The outfit will present a paper on the new tech at the 2017 IEEE International Electron Devices Meeting (IEDM) which is taking place in San Francisco, USA.
The paper selected focuses on realizing a 128Gb MLC (or 192Gb TLC) 3D NAND Flash using the SGVC architecture with only 16 layers. Such memory density is comparable to 48-layer 3D NAND using a popular gate-all-around (GAA) structure.
SGVC has the important advantage of much smaller cell size and pitch scaling capability which allows very high density memory with many fewer stacking layers.
The 3D SGVC NAND makes use of arrays of vertically arranged single-gate flat-cell thin film transistors with an ultra thin body, which aren't as sensitive to variation of critical dimensions (CD) as GAA devices, and is very suitable for read-intensive memory applications.
No clear idea if this will ever make a product, but apparently the technology is feasible.