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Samsung starts mass production of 10nm 8Gb DDR4 DRAM

by on05 April 2016


Improved data and power rates

Samsung has started mass production of "the industry's first 10nm, 8-Gb DDR4 DRAM chips," and memory modules based upon them.

The new memory chips is claimed to offer improved data rates and power efficiency over the previous 20nm-class memory flavours and can manage 30 per cent better performance, supporting data rates up to 3,200Mbps.

The chips are supposed to use 10-20 per cent less power, thanks to Samsung’s proprietary cell design technology, quadruple patterning technology lithography, and ultra-thin dielectric layer deposition technology.

The Samsung blog says that the new leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves upon the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.

The next thing on the agenda is for Samsung to launch next-gen 10nm mobile DRAM products with higher densities which will be smaller and faster.

PC users won't be forgotten, with 10nm-class DDR4 modules, ranging from 4GB for notebook PCs, to 128GB for enterprise servers, rolling out throughout 2016, Samsung sang.

"While introducing a wide array of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM portfolio throughout the year."

Last modified on 05 April 2016
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