Micron Technology has announced that is is currently shipping 2GB Hybrid Memory Cube (HMC) engineering samples that represent a dramatic step forward in memory technology and are designed for applications that require high-bandwidth access to memory like data processing, data packet buffering or storage.
According to Micron, the Hybrid Memory Cube uses advanced through-silicon vias (TSVs)-vertical conduit that connect a stack of individual chips in order to combine high-performance logic with Micron's DRAM. The current engineering sample features a 2GB memory cube that consists of four 4Gb DRAM dies. It provides 160GB/s of memory bandwidth while using up to 70 percent less energy per bit when compared to currently available technologies.
Micron expects 4GB HMC engineering samples to be available in early 2014 while volume production of both 2GB and 4GB HMC is scheduled to begin later in 2014.