40nm process with mass
production before year’s end
Last modified on Thursday, 08 October 2009 12:19
recently announced that it has completed another world record milestone with
its development of 2Gb DDR3 SDRAM based on the 40nm fabrication process. The
new densely compacted chip size results in a significant 44-percent higher chip
yield per wafer compared to the chipmaker’s 50nm DDR3 SDRAM.
In addition, the chipmaker suggests that the investment cost
of transitioning from 50nm to 40nm is expected to be nothing at all. The new
40nm 2Gb DDR3 SDRAM achieves an attractive power consumption benefit of
two-thirds less input voltage current than its predecessor and supports as low
as 1.2V operation.
The company is currently utilizing a product-specific
manufacturing system that allows for separately managed manufacturing lines for
mobile and PC-related products. Sources within the company have stated that it
may be possible to increase the ratio of its 40nm output by as much as
50-percent of its total overall production. While these are large estimates, it
can be noted that enthusiast market 40nm DDR3 SDRAM products will hit store
shelves sometime in Q1 2010.