Today, Samsung Semiconductor, Inc., a subsidiary of Samsung
Electronics, announced that it has developed and validated the world's first 40
nanometer DRAM chip and module, a 1Gbit DDR2 component and a corresponding
1GByte DDR2 SODIMM. Both have been
certified by the Intel Platform Validation program for use with Intel GM45
Express mobile chipsets.
The transition to 40nm process technology in the DRAM
industry will drive further reductions in voltage requirements against 50nm chips, and Samsung expects to deliver around power savings of about 30% with the new process. The company also claims that 40nm DRAM
delivers an approximately 60% increase in productivity over 50nm chips, but we
are curious as to how this measurement was achieved.
In order to qualify its achievement, the company expects
that its 40nm process will mark a significant step towards next generation DRAM
technologies such as DDR4. "Securing
extremely advanced technology and system/platform validated operability
underscores our commitment as technology leader to deploying the most efficient
means of producing DRAM in the marketplace," said Kevin Lee, vice
president, technical marketing, Samsung Semiconductor, Inc.
Wednesday, 04 February 2009 17:46
Samsung develops and validates first 40nm DRAM
Written by Jon Worrel
30% more power efficient
than 50nm
Published in
Memory
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