Published in Memory

Intel and Micron tests 50 nanometer NAND


MLC NAND flash Joint venture up and runnig 

Intel and Micron announced that they are testing the first fruits of their NAND flash memory joint venture, IM Flash Technologies.

A new MLC NAND flash memory component have 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.

According to a joint press release,  the products are the result of a year's joint effort.  Intel and Micron have improved a state-of-the-art 300 millimeter flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.

More here.

Last modified on 26 April 2007
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