Intel and Micron announced that they are testing the first fruits of their NAND flash memory joint venture, IM Flash Technologies.
A new MLC NAND flash memory component have 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.
According to a joint press release, the products are the result of a year's joint effort. Intel and Micron have improved a state-of-the-art 300 millimeter flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.
More
here.