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Intel and Micron tests 50 nanometer NAND

by on26 April 2007

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MLC NAND flash Joint venture up and runnig 


Intel and Micron announced that they are testing the first fruits of their NAND flash memory joint venture, IM Flash Technologies.

A new MLC NAND flash memory component have 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.

According to a joint press release,  the products are the result of a year's joint effort.  Intel and Micron have improved a state-of-the-art 300 millimeter flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.

More here.






Last modified on 26 April 2007
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