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34nm 32 gigabit multi-level cell chip
Intel and Micro have released a sub-40 nanometer NAND flash memory device, with the pair showing off a 34nm 32 gigabit multi-level cell chip.
According to a statement from the two, the 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing much higher densities. Micron’s Memory Group spokesman said that the device provides the best bit storage density available in the industry.
Intel thinks that the 34nm process technology will accelerate the adoption of solid-state drive (SSD) solutions in computing platforms. Mass production is expected to begin in the next couple of months.
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Intel and Micro show off sub-40 NAND flash
34nm 32 gigabit multi-level cell chip
Intel and Micro have released a sub-40 nanometer NAND flash memory device, with the pair showing off a 34nm 32 gigabit multi-level cell chip.
According to a statement from the two, the 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing much higher densities. Micron’s Memory Group spokesman said that the device provides the best bit storage density available in the industry.
Intel thinks that the 34nm process technology will accelerate the adoption of solid-state drive (SSD) solutions in computing platforms. Mass production is expected to begin in the next couple of months.