Published in Memory

Samsung starts churning 20nm 4Gb DDR3



All about efficiency

Samsung has started producing 20nm 4Gb DRAM modules which are supposed to replace 25nm chips and offer a few advantages.

The company says 20nm parts are about 25 percent more efficient than older 25nm chips. Samsung says it "pushed the envelope" of DRAM scaling, while utilizing currently available immersion ArF lithography.

"With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3, and more than twice that of 30nm-class DDR3," Samsung said.

It is still unclear when the new modules are coming to market, but it shouldn't take too long.

20nm-4Gb-DDR3-02

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