Three-bit-per-cell NAND flash breakthrough
Last modified on Monday, 11 February 2008 04:38
SanDisk announced that they will start producing new multi-level cell (MLC) 43nm flash memory that offers a breakthrough three-bits-per-cell. This new breakthrough in MLC flash memory technology will allow the company to double the density of the flash memory that it is able to produce when compared to the 56nm technology that they are using today.
Of course, this news means a couple of things to the end user, the biggest of which is that the new technology will allow SanDisk to produce cheaper MLC NAND flash memory that will offer high capacity and lower power consumption. This should and will lead to cost effective solid state disk (SSD) drives at some point in the future that will feature larger sizes than the drives that are on the market today.
The 43nm process was developed by SanDisk in conjunction with Toshiba. SanDisk expects to have samples of the new NAND flash memory in the March/April timeframe. SanDisk did not release any details of when consumers can expect to see the 43nm flash memory in SanDisk storage offerings.