Published in Memory

Samsung announces 3D chip stacking



We like our memory dense, like Christmas pudding
Chipmaker Samsung has announced a new 8GB dual inline memory module (DIMM) that stacks memory chips on top of each other.

The big idea is that the density of the memory by 50 per cent compared to conventional DIMM. It is all based on Samsung's Green DDR3 DRAM and 40 nanometer (nm)-sized technology.

In a press release the outfit told us that it will be aimed at the server and enterprise storage markets. Samsung said the process saves up to 40 per cent of the power consumed by a conventional RDIMM. Using the technology will greatly improve chip density in next-generation server systems, Samsung said.

The technology creates micron-sized holes through the chip silicon vertically instead of just horizontally.  This makes the architecture dense. Samsung wants to apply the same technology to  memory built with 30nm-class and smaller circuitry.

Samsung did not release any suggested pricing for the new RDIMM product, which will start to appear in the  second half of 2011.


Last modified on 08 December 2010
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