Back in September, Samsung announced its development of the
world's first 50nm 2GB DDR3 memory. This
morning, the world’s largest consumer electronics company just announced that
it has doubled the previous density and has developed the world’s first 4Gbit DDR3
memory chip, based on 50nm process technology.
The new 4Gbit DDR3 memory is designed to be low-powered and operates
at 1.35v, which is a 20% improvement over 1.5v modules. On another
note, its maximum speed is rated to be DDR3 1600MHz. In 16GB module configurations, the new memory
can consume 40% less power than 2GB DDR3 due to its higher density and
because it uses only 32 chips instead of 64.
Before anyone sticks six of these in their X58-based desktop,
keep in mind that Samsung originally intends these modules to be used for the new
generation of "green" servers, which combined with lower power consumption
will not only provide a reduction in electricity bills, but also a cutback in
installment fees, maintenance fees and repair fees involving power suppliers
and heat-emitting equipment.
However, the new memory can be also be produced in 8GB
unbuffered DIMMs for workstations and desktop PCs, and 8GB small outline DIMM
(SODIMM) for laptops. By applying dual-die package technology, Samsung can
create modules up to 32GB, which is twice
the capacity it was able to do previously on its 2GB DDR3 chips.
"We have
leveraged our strength in innovation to develop the first 4GB DDR3, in leading
the industry to higher DRAM densities," said Kevin Lee, vice
president, technical marketing, Samsung Semiconductor, Inc. "By designing our 4GB DDR3 using
state-of-the-art 50nm class technology, we are setting the stage for what
ultimately will result in significant cost-savings, for servers and for the
overall computing market," he added.
Furthermore, Samsung’s press release was released on January
29th and can be found here.